The relaxation of a Si defect sub-system, modified by the implantation of high-energy heavy ions, was studied by varying the electrical properties of irradiated Si crystals annealed at 450C. It was shown that quenched-in acceptors were introduced as a result of irradiation with comparatively low doses of Bi ions and subsequent relatively short annealings (up to 5h). The distributions of these quenched-in acceptors exhibited 2 peaks: one at a depth of about 10µm, and one at a depth which approximately corresponded to the projected range of the ions (43.5µm). The peaks in the distribution of quenched-in acceptors corresponded to regions enriched with vacancy-containing defects. As the heat-treatment time was increased, the acceptor centers transformed into donor centers; with the spatial distribution of centers remaining intact. At the same time, an almost uniform introduction of quenched-in donors occurred throughout the entire crystal; beyond the depth corresponding to the projected range of ions.

Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions. S.A.Smagulova, I.V.Antonova, E.P.Neustroev, V.A.Skuratov: Semiconductors, 2003, 37[5], 546-50