It was recalled that point-defect engineering, using high-energy ion-bombardment, could be used as a method for injecting vacancies near to the surface region, with excessive interstitials being created near to the end of the projected range. It was demonstrated that the implantation of MeV Si ions into a Si substrate could suppress the boride-enhanced diffusion normally associated with a high B concentration layer. Such B-diffusion control could be used to form ultra-shallow junctions.

Reduction of Boride-Enhanced Diffusion by Point Defect Engineering and its Application for Shallow Junction Formation. L.Shao, J.Liu, X.Wang, H.Chen, P.E.Thompson, W.K.Chu: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 413-6