The defects produced in 8MeV proton-bombarded Si were studied by using Fourier-transform infra-red spectroscopy and positron annihilation measurements. Isothermal annealing of the divacancy absorption band, monitored using Fourier-transform infra-red spectroscopy, was compared with positron annihilation in similar samples. The 2 methods agreed perfectly for isothermal annealing at 150C but, at 250C, the 1.8μm absorption band disappeared after annealing for 1h. Meanwhile, the positron lifetime and trapping rate remained constant, and annealing to 500C was required in order to remove the divacancy response. Since divacancies were not mobile at 150C, their annealing could be attributed to recombination with mobile interstitials. The discrepancy observed during annealing at 250C was suggested to be a consequence of some sort of divacancy agglomeration.

Divacancies in Proton Irradiated Silicon - Comparison of Annealing Mechanisms Studied with Infra-Red Spectroscopy and Positron Annihilation. R.Poirier, V.Avalos, S.Dannefaer, F.Schiettekatte, S.Roorda: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 85-9