The segregation of In to dislocation loops, and In co-diffusion, were investigated by using secondary-ion mass spectrometry and a physically-based diffusion model. High doses of As (30keV, 1015/cm2) and B (5keV, 1015/cm2) were implanted into In-doped Si wafers which were then annealed at 750 and 1000C in a N ambient. Secondary-ion mass spectrometry profiles revealed In segregation around the implantation damage in both As- and B-implanted samples. The In segregation around the B implantation damage confirmed that the In segregation was caused mainly by implantation damage. A diffusion model was presented which described the interaction of In and dislocation loops and the electric field/chemical ion pairing effect. A simulation that included this model could predict In segregation to dislocation loops produced by As/B implantation damage. The As/B implants also caused transient enhanced In diffusion. A difference in In diffusivity enhancement was found between As implants and B implants. It was proposed that the difference could be attributed to a difference in the number of net excess interstitials; due mainly to ion-mass effects.

Indium Segregation to Dislocation Loops Induced by Ion Implantation Damage in Silicon. T.Noda: Journal of Applied Physics, 2003, 93[3], 1428-31