Two-detector coincidence measurements of the Doppler broadened annihilation spectra with a variable energy positron beam were carried out in a study of the annealing behavior of Si implanted with As, P and Cu ions. Different annealing behaviors were observed depending on the ions implanted. In P implanted Si, defect complexes grew at up to 400C. In case of Cu implanted Si, the formation of vacancy-Cu complexes was indicated. Coincidence Doppler broadening measurement was a powerful tool for investigation of defects. It was concluded that a combination of this and other techniques was necessary for the full exploitation of coincidence Doppler broadening measurements.

Defect Study of Ion-Implanted Si by Coincidence Doppler Broadening Measurements. T.Akahane, M.Fujinami, T.Sawada: Applied Surface Science, 2002, 194[1-4], 116-121