An experimental method for studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted Si was demonstrated. The concept was based upon deep-level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–O center, and the interstitial profile, represented by the interstitial C–substitutional C pair, were obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail was extensively studied and taken into account. Thus, the two profiles could be recorded with a high relative depth resolution. Using low doses, point defects were introduced in lightly doped float zone n-type Si by implantation with 6.8MeV B ions and 680keV and 1.3MeV protons at room temperature. The effect of

the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile was displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increased as the width of the initial point defect distribution increased. This behavior was explained by a simple model where the preferential forward momentum of recoiling Si atoms and the highly efficient direct recombination of primary point defects were taken into account.

Vacancy and Interstitial Depth Profiles in Ion-Implanted Silicon. P.Lévêque, H.Kortegaard Nielsen, P.Pellegrino, A.Hallén, B.G.Svensson, A.Y.Kuznetsov, J.Wong-Leung, C.Jagadish, V.Privitera: Journal of Applied Physics, 2003, 93[2], 871-7