Low-dose implantations with 65keV Si and 150keV Ge ions into the n+ top layer of Si n+p diodes were carried out. The defects produced in deeper-lying layers were studied by deep-level transient spectroscopy. Results were compared to crystal-TRIM calculations and results from 2MeV electron irradiations. Previously, ion channeling was disregarded in studies on point defect migration at room temperature using ion implantation in surface layers. In the present studies, ion channeling was dominant and it overwhelms any contribution from point defect diffusion.

Electrically Active Defects in Silicon Produced by Ion Channeling. H.Kortegaard Nielsen, B.G.Svensson, J.J.Goubet, A. Nylandsted Larsen: Applied Physics Letters, 2003, 82[22], 3865-7