The energy loss distribution of ions transmitted through a 5.7μm-thick Si crystal was measured and simulated by Monte Carlo channeling simulation. A general resemblance between the measured and simulated energy loss distributions was obtained after incorporation of an energy-dependent energy loss into the simulation. The energy-loss calculations were used to investigate the feasibility of detecting the presence of light element dopant clusters in a host crystal from the shape of the energy-loss distribution, using transmission ion channeling. A curved crystal structure was used as a model for a region in the host crystal with clusters. The presence of the curvature had a large influence upon the transmitted energy distribution. This offered the possibility of determining the presence of dopant clusters in a host crystal, by using transmission ion channeling.

Transmitted Ion Energy Loss Distributions to Detect Cluster Formation in Silicon. L.J.M.Selen, A.Van Loon, L.J.van Ijzendoorn, M.J.A.de Voigt: Nuclear Instruments and Methods in Physics Research B, 2002, 194[4], 479-88