The defect structures created by implanting radioactive 57Mn+ ions into Si-based semiconductors held at 77 to 500K were studied by Mössbauer spectroscopy of the 14keV γ-radiation emitted by the decay of the 57Fe daughter atoms. After implantation at below 300K, most Fe atoms were located in a specific defect structure; probably within a so-called amorphous pocket which partially annealed at 100 to 200K and completely at 300 to 450K. The latter was proved to occur within minutes, by performing isothermal time-delayed measurements, and resulted in the substitutional incorporation of 57Mn probe atoms. The atomic structure of the annealing defect was compared to that of Fe in amorphous Si upon 57Mn implantation.

Creation and Annealing of Defect Structures in Silicon-Based Semiconductors during and after Implantation at 77–500K. G.Weyer, H.P.Gunnlaugsson, M.Dietrich, M.Fanciulli, K.Bharuth-Ram, R.Sielemann, Isolde: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 90-4