The As and H ions produced from a mixture of arsine and H gas were implanted to a dose of 3 x 1015 As+/cm2 into Si by using an ion-shower implanter. The dominant ion species implanted into the Si were As2H+, AsH+, H5+ and H3+. The As atoms diffused into the Si, with high diffusion coefficients, during annealing at 700 and 800C. However, when the implanted Si was annealed at 900C, the As atoms diffused into a deeper region of the Si; with a very small diffusion coefficient that was independent of the concentration.

Annealing of Silicon Implanted with Arsine and Hydrogen Ions. K.Yokota, S.Nakase, K.Nakamura, M.Tannjou, K.Matsuda, H.Takano: Physica Status Solidi A, 2003, 195[2], 396-400