The deformation behavior of macroporous Si wafers subjected to high-temperature oxidation was studied, and the sample bending and stress relaxation which occurred when the oxide was removed were determined. X-ray diffractometry and topography were used to determine the sample bending radius and the lattice parameters and to reveal areas of dislocation generation. The strain of the Si lattice in oxidized macroporous Si was about 10–4, and decreased by an order of magnitude after oxide dissolution. The plastic part of the strain was accompanied by the generation of dislocations in the most strained regions: the interfaces between the porous layer and the substrate in the vertical direction and between the central porous region and the pore-free edge in the horizontal plane. The dislocation density was about 104/cm2.

Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation. E.V.Astrova, V.V.Ratnikov, A.D.Remenyuk, I.L.Shulpina: Semiconductors, 2002, 36[9], 1033-42