The processes of electron–hole drop formation and migration in Si crystal containing a significant number of dislocations could have different features as compared with those in dislocation-free crystals. The results of a low-temperature photoluminescence study of electron–hole drops in Si with dislocations presented showed that dislocations in Si were centers of electron–hole drop condensation. In addition to the line for dislocation-free Si with a maximum at 1.082eV, the radiative spectrum of electron–hole drops in Si with dislocations contained an additional line, with a maximum at 1.078eV, that was due to the appearance of unusual electron–hole drops extended along the dislocation axis. The existence of cylindrical electron–hole drops on dislocations was also confirmed by the different characters of the dependence of the electron–hole drop recombination radiation intensity on the excitation intensity and was demonstrated by model calculations.

Electron–Hole Drops in Silicon with Dislocations. N.Drozdov, A.Fedotov: Journal of Physics - Condensed Matter, 2002, 14[48], 12813-8