Characteristic peculiarities of the generation and propagation of dislocations in N-doped Si wafers (grown by the Czochralski method) were investigated by the four-point bending method. The critical stresses for the dislocation generation and dislocation velocity in N crystals were less than in non-doped crystals for equal loads. It was proposed that the strengthening of N-doped crystals was caused by the influence of N on the decomposition of the supersaturated O solid solution during the cooling of the growing single crystals. As a result, many dispersed O precipitates were generated in the crystal volume and harden it by hindering dislocation generation and propagation.

Generation and Motion of Dislocations in Nitrogen-Doped Silicon Single Crystals. M.V.Mezhennyi, M.G.Milvidski, V.Y.Reznik, R.J.Falster: Journal of Physics - Condensed Matter, 2002, 14[48], 12903-8