Critical stresses necessary to generate dislocation glide loops in Czochralski Si containing oxide precipitates were investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide

loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide dislocations was investigated in samples with different oxide precipitate sizes and different numbers of dislocations initially attached to precipitates. It was found that the value of the critical resolved shear stress for generating dislocation glide loops depended upon the duration of the applied stress. A qualitative model involving punched-out prismatic loops was considered for the explanation of the experimental data. It was found that glide dislocations must be generated from pre-existing large loops probably associated with particular oxide precipitates or other complex defects.

Generation of Dislocation Glide Loops in Czochralski Silicon. A.Giannattasio, S.Senkader, R.J.Falster, P.R.Wilshaw: Journal of Physics - Condensed Matter, 2002, 14[48], 12981-7