The temperature dependence of D-band and band-to-band luminescence was measured in EFG samples between 80K and room temperature for defects/dislocations presenting different amounts of contamination. The contamination density was estimated from the temperature behaviour of the electron-beam-induced current contrast, ranging between about 104 and 106 impurities /cm dislocation length. The D1 line already became visible at room temperature but its intensity was found to exhibit a maximum at about 150K. The D2, D3 and D4 started to appear at about 250, 190 and 170K, respectively, and increased in intensity with decreasing temperature. At room temperature, the width of the D1 line was broad and became narrower upon lowering the temperature. Meanwhile, D2 exhibited the opposite behaviour. The intensities of D1 and D2 were observed to exhibit strong variations across the sample, but this was not observed for the pair D4/D3. In particular, the origin of the lines D1 and D2 was still far from being understood. Two more lines at 1.040 and 0.987eV were found in regions where the band-to-band recombination was strong. They appeared without any defect contribution and were explained as being phonon replicas of the band edge luminescence.

Temperature Behaviour of Photoluminescence and Electron-Beam-Induced Current Recombination Behaviour of Extended Defects in Solar Grade Silicon. T.Arguirov, W.Seifert, M.Kittler, J.Reif: Journal of Physics - Condensed Matter, 2002, 14[48], 13169-77