The interaction between O atoms and dislocations in Czochralski-grown Si was studied experimentally. Measurements concerning the locking of dislocations by O atoms were carried out at 450 to 850C for various annealing times. Using samples with a low O content (2.6 x 1017/cm3) it was possible to investigate the nature of binding of O atoms to dislocations below 700C; where the diffusion of O in Si exhibited a well known anomalous behaviour. It was found that although the binding enthalpy above 700C agreed well with the previously published value, its value was different for lower temperatures. The O–dislocation binding enthalpy was estimated to be about 0.2eV at 450 to 650C.

On the Dislocation–Oxygen Interactions in Czochralski-Grown Silicon - Oxygen Diffusion and Binding at Low Temperatures. S.Senkader, A.Giannattasio, R.J.Falster, P.R.Wilshaw: Journal of Physics - Condensed Matter, 2002, 14[48], 13141-5