The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 x 1020/cm3 was investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch was strongly suppressed when the concentration of B, P and As impurities exceeds 1019/cm3, which was interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increased on increasing the concentration in B, P, As and Sb impurities.

Impurity Effects on Dislocation Activities in Si. I.Yonenaga: Journal of Physics - Condensed Matter, 2002, 14[48], 13179-83