The transformation of structural defects and photoluminescence spectra of n- and p-type Cz-Si after implantation with Er ions at 1MeV energy to doses of 1013 and 1014/cm2 followed by annealing (620 to 1100C, 0.25 to 3h) in Cl-containing atmospheres or O were studied by transmission electron microscopy, optical microscopy in combination with selective chemical etching, and photoluminescence. For the doses used, annealing at below 1100C led to the formation of different extended defects (partial Frank or perfect prismatic dislocation loops) of sub-micron sizes which do not prevent the appearance of Er-related lines and do not give rise to dislocation-related lines in the photoluminescence spectrum. In contrast, high-temperature annealing at 1100C results in the development of similar 3-dimensional networks of pure edge dislocations with a density of ~107/cm2. These dislocations were responsible for the appearance of quite intensive dislocation-related luminescence. For high-dose implantation, when annealing at 1100C was used, the same dislocation networks were found to form in the n- and p-Si wafers with different low-temperature annealing stages (if any). However, all of these parameters exert the peculiar influence upon the intensity of dislocation-related luminescence lines.

Correlation between Defect Structure and Luminescence Spectra in Monocrystalline Erbium-Implanted Silicon. N.A.Sobolev, A.M.Emelyanov, E.I.Shek, V.I.Vdovin, T.G.Yugova, S.Pizzini: Journal of Physics - Condensed Matter, 2002, 14[48], 13241-6