A study was made of the effect of N on the optical properties of dislocations in N-doped Czochralski and N-doped float zone Si samples where the N doping was carried out by adding Si3N4 in the molten Si charge or by N gas dissolution. Dislocations were introduced by plastic deformation at 650C. In N-doped plastically deformed samples, emissions in the range of the D1–D4 bands of dislocations were present with a significant shifting from the energies and intensities of the corresponding bands in N-free samples. It was shown that the main effect of N could be the enhancement of the O precipitation. The results confirmed the suggestion that the luminescence at 0.830eV was associated with some intrinsic properties of O precipitates.

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float-Zone Silicon. S.Binetti, R.Somaschini, A.Le Donne, E.Leoni, S.Pizzini, D.Li, D.Yang: Journal of Physics - Condensed Matter, 2002, 14[48], 13247-54