Samples cut out from Si crystals doped with 3 or 1.2%Ge were studied by means of synchrotron white-beam Bragg-case section and projection topography as well as conventional transmission Lang topography. The obtained topographs revealed a dominant contrast arising from the segregation of Ge. The use of Bragg-case section topography made it possible to follow the shape of growth surfaces within the crystal. The formation of contrast in Bragg-case section topographs for various orientations of growth surfaces with respect to the incident beam was considered. The applied methods also permitted the revelation of growth surface instabilities which occurred in some regions of Si:Ge crystals.

Bragg-Case Section Topography of Growth Defects in Si:Ge Crystals. K.Wieteska, W.Wierzchowski, W.Graeff, M.Lefeld-Sosnowska, M.Regulska: Journal of Physics D, 2003, 36[10A], A133-8