Measurements were made of the lower yield point of highly B-doped Si. A comparison with similar investigations of P-doped material revealed a different temperature dependence of the lower yield stress, although the doping concentration of the crystals and the strain-rate and temperature ranges of the experiments were the same. In B doped Si, a temperature independent domain emerges, while for P doping there remains a well-defined temperature dependence. Apparently the interaction of B with dislocations in Si was different from that of P. Suitable models were available to describe the different influence of both dopants on the yield point.

The Interaction of Boron and Phosphorus with Dislocations in Silicon. H.Siethoff, H.G.Brion: Materials Science and Engineering A, 2003, 355[1-2], 311-4