In situ observations were made of melting in non-doped Si by using X-ray topographic methods. Dislocation-free melting was successfully achieved by appropriate choice of sample shape and heaters. In order to clarify dislocation effects upon the melting process, melting with an isolated dislocation in the melt zone was studied. It was shown that melting, with and without an isolated dislocation, was different in non-doped crystals. The crystal/melt interface shape was estimated from the digitized contrast of topographic images. The crystal/melt interface shape was maintained flat during dislocation-free melting, while the interface shape was rough during melting with an isolated dislocation in the molten zone.

Crystal–Melt Interface Shape and Dislocations during the Melting of Silicon. Y.Wang, K.Kakimoto: Journal of Crystal Growth, 2003, 247[1-2], 1-12