The specific features in the generation and motion of dislocations were investigated in Si:N single crystals grown by the Czochralski method. The motion of dislocation loops was analyzed by the 4-point bending technique at 500 to 800C. The dislocation loops were preliminarily introduced into the samples by using a Knoop indenter at room temperature. It was found that doping with N led to a considerable increase in the critical stress of the onset of dislocation motion from surface sources (indentations) and in the stress of the generation of dislocations from internal sources. The velocity of dislocation motion in Si:N crystals was less than that in undoped crystals; under comparable loads. The hardening effect of N was explained by the fact that N promoted the decomposition of a solid solution of O in Si during post-crystallization cooling.

Specific Features in the Generation and Motion of Dislocations in Silicon Single Crystals Doped with Nitrogen. M.V.Mezhennyĭ, M.G.Milvidskiĭ, V.Y.Reznik: Physics of the Solid State, 2002, 44[7], 1278-83