The effect of O on the dislocation-induced photoluminescence spectra at 4.2K was studied in Si crystals with different impurity compositions subjected to plastic deformation at above 1000C. A strong effect of doping impurities upon the dislocation-induced photoluminescence spectra was observed for concentrations above 1016/cm3. It was shown that the peculiarities of many dislocation-induced photoluminescence spectra in Si could be explained by assuming that the D1 and D2 lines were associated with edge-type dislocation steps on glide dislocations.

Dislocation-Induced Photoluminescence in Silicon Crystals of Various Impurity Composition. S.A.Shevchenko, A.N.Izotov: Physics of the Solid State, 2003, 45[2], 259-65