The effect of mobile impurities on the dislocation dynamics under static and variable loading of crystals was calculated. It was shown that the dynamic aging of dislocations may produce a specific regime where dislocations were at rest upon static loading and move only under a growing stress. The dislocation mobility in this regime was athermal. The existence conditions for this regime were studied. The dependence of the dislocation path lengths in Si on the stress pulse rise-time that was observed in pulsed-load experiments was explained by the existence of this regime.

Different Types of Dislocation Dynamics Resulting from the Dynamic Aging of Dislocations. B.V.Petukhov: Technical Physics, 2003, 48[7], 880-4