The dynamic behavior of dislocations in heavily Ge-doped crystals with concentrations of up to 2.5 x 1020/cm3, and Ge-and-B co-doped crystals with concentrations of 4 x 1019 and

9 x 1018/cm3, respectively, was investigated by using the etch pit technique in comparison with that in undoped and B-doped Si crystals. Strong suppression of the generation of dislocations from a surface scratch was found for Ge and B co-doped Si in comparison with that observed for Ge-doped and B-doped Si. The velocity of dislocations in Ge and B co-doped Si crystals was found to be lower than that of dislocations in B-doped, Ge-doped, and undoped Si. The coexistence of Ge and B impurities in Si was considered to be effective at immobilizing and retarding the velocity of dislocations in Si.

Dynamic Characteristics of Dislocations in Ge-Doped and (Ge+B) Co-Doped Silicon. I.Yonenaga, T.Taishi, X.Huang, K.Hoshikawa: Journal of Applied Physics, 2003, 93[1], 265-9