Misfit dislocations containing different amounts of contamination were analyzed by means of deep-level-transient spectroscopy. The amount of dislocation contamination was determined from the temperature dependence of the dislocation contrast, c(T), measured by electron-beam-induced current. The C1 line was not observed for clean 60° dislocations in n-type Si, but appeared upon contamination of dislocations by Au. The density of levels related to C1 measured by deep-level-transient spectroscopy was in good agreement with the density of impurities determined from the electron-beam-induced current c(T) behavior. The width of the distribution of energy levels that form the C1 line increased with the amount of contamination. It was rather sharp for dislocations contaminated with less than 105 impurities/cm dislocation length, and became broadened for dislocations with about 106 impurities/cm length (ΔE = 0.050eV). The experimental observations were explained by accommodation of impurities in both the core and in the strain field of the dislocations.

Influence of Contamination on the Dislocation-Related Deep Level C1 Line Observed in Deep-Level-Transient Spectroscopy of n-Type Silicon - a Comparison with the Technique of Electron-Beam-Induced Current. K.Knobloch, M.Kittler, W.Seifert: Journal of Applied Physics, 2003, 93[2], 1069-74