The mechanical behaviour of single-crystal Si tested in fatigue was investigated under plastic strain amplitude control conditions, at a plastic shear strain rate of 3 x 10-4/s at 825 to 900C, where the lattice frictional forces were still effective, for plastic strain amplitudes ranging from 6 x 10-4 to 5 x 10-3. Cyclic stress-strain curves exhibit two different stages of hardening and pass through a marked maximum before saturation was reached. The saturation stress was decreased when the strain amplitude per cycle was increased. Scanning electron microscopy observations suggested that strain localization takes place near the maximum stress and beyond. Transmission electron microscopy reveals a variety of dislocation arrangements, the most typical of which are, firstly, regularly spaced elongated braids of edge dipoles, secondly, thicker stripes with dense shells and whose cores contain apparently self-organized secondary dislocations and, thirdly, long rows of prismatic loops.

Mechanical Behaviour and Dislocation Arrangements of Cyclically Deformed Silicon Single Crystals. M.Legros, A.Jacques, A.George: Philosophical Magazine A, 2002, 82[17], 3275-88