Photoluminescence and deep level transient spectroscopy measurements were used to study the origin of optical emissions in the 0.8 to 1.0eV region of selected O precipitated and dislocated Si samples. It was shown that the D1 band, present in both types of sample, was the convolution of different sub-bands, narrowly spaced between 0.802 and 0.820eV. The emission at 0.807eV, attributed, in the literature, to dislocations was found only in samples where dislocations were intentionally generated by plastic deformation or induced by the clustering of self-interstitials generated during the growth of oxide precipitates. A comparison of the results of photoluminescence, deep level transient spectroscopic, and optical deep level transient spectroscopic measurements allows the assignment of levels involved in the radiative recombination processes.

Optical Properties of Oxygen Precipitates and Dislocations in Silicon. S.Binetti, S.Pizzini, E.Leoni, R.Somaschini, A.Castaldini, A.Cavallini: Journal of Applied Physics, 2002, 92[5], 2437-45