The evolution of {113} defects within Si implant-generated defect profiles was investigated by means of transmission electron microscopy. Two cases were considered. In one, the {113} defects evolved into dislocation loops. In the other, at lower doses and energies, the {113} defects grew in size and finally dissolved. The study showed that dissolution occurred preferentially at the near-surface side of the defect band; thus indicating that the surface was the principal sink for interstitials in this system.

Time Evolution of the Depth Profile of {113} Defects during Transient Enhanced Diffusion in Silicon. B.Colombeau, N.E.B.Cowern, F.Cristiano, P.Calvo, N.Cherkashin, Y.Lamrani, A.Claverie: Applied Physics Letters, 2003, 83[10], 1953-5