Forward bias current–voltage characteristics (JD–V) were studied for both p–i–n (superstrate) and n–i–p (substrate) (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and differing-thickness i-layers. The contributions of the p/i interfaces to the JD–V characteristics were separated, and the dependence upon the thickness of the i-layers was established. Equivalence was observed upon comparing thecharacteristics of p–i–n and n–i–p cells. The various JD–V characteristics were found to be consistent with uniform densities of defects in the i-layers, and thus inconsistent with the spatially varying large densities of defects predicted for solar-cell structures by the defect pool model.

Absence of Carrier Recombination Associated with the Defect Pool Model in Intrinsic Amorphous Silicon Layers - Evidence from Current–Voltage Characteristics on p–i–n and n–i–p solar Cells. J.Deng, J.M.Pearce, R.J.Koval, V.Vlahos, R.W.Collins, C.R.Wronski: Applied Physics Letters, 2003, 82[18], 3023-5