The Si-B3 electron spin resonance signal from agglomerates of self-interstitials was detected for the first time in H-doped float-zone samples subjected to annealing after electron irradiation. This signal had previously been detected only in neutron- or proton-irradiated Si samples. The absence of obscuring electron spin resonance peaks for the investigated samples under the present measurement conditions permitted the investigation of the hyperfine structure of the Si-B3 spectra. The analysis supported the suggestion that a tetra-interstitial defect was the origin of the signal.

Electron Spin Resonance Signal from a Tetra-Interstitial Defect in Silicon. T.Mchedlidze, M.Suezawa: Journal of Physics - Condensed Matter, 2003, 15[22], 3683-8