A model for the reduction of oxidation-enhanced diffusion in heavily-doped Si layers, via the bulk recombination of self-interstitials at centers associated with the dopant, was suggested. Allowances made for the recombination of excess self-interstitials which were generated during thermal oxidation, permitted a description of the dependence of the oxidation-enhanced diffusion reduction upon the doping level. Experimental data on the oxidation-enhanced diffusion of B and P impurities in uniformly doped Si layers were analyzed. From this analysis, recombination-rate constants were determined and capture radii were estimated for various interactions of excess self-interstitials with impurity atoms and impurity–vacancy pairs.

A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers. O.V.Aleksandrov, N.N.Afonin: Semiconductors, 2003, 37[6], 625-31