On the basis of an analysis of secondary processes of radiation-induced defect formation in crystals, with charge-dependent selective traps for vacancies and interstitial atoms, the energy levels of vacancies and interstitial atoms were identified. These levels had previously been deduced from the effect of irradiation conditions upon the annihilation rate of elementary primary defects. It was deduced that levels at about Ec – 0.28eV and Ec – 0.65eV, in the band-gap, probably belonged to vacancies. Levels at about Ec – 0.44eV, Ec – 0.86eV and Ec – 0.67eV were attributed to intrinsic interstitial atoms.

Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon. V.V.Lukjanitsa: Semiconductors, 2003, 37[4], 404-13