The influence of Sn-doping upon reactions involving interstitial C atoms was studied. It was shown that the Sn atoms were effective sinks for interstitial C atoms (CI). As a result, the formation of CIOI and CICS centers was not observed during the annealing of CI centers. Instead, CISnS centers were formed. The CIOI and CICS centers appeared in Si:Sn only after annealing of the CISnS complexes formed. It was found that CI atoms could occupy 2 different interstices around Sn atoms. Radiation-defect formation in Si:Sn was simulated by means of quasi-chemical reactions, and expressions were derived for the dependence of the concentrations of the main radiation defects upon the Sn content.

The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon. L.I.Khirunenko, O.A.Kobzar, Y.V.Pomozov, M.G.Sosnin, N.A.Tripachko: Semiconductors, 2003, 37[3], 288-93