The effect of illumination upon the isothermal relaxation of slow photo-induced metastable defects (metastable electrically active impurity atoms) in B-doped a-Si:H films was studied. It was established that, under illumination, the relaxation kinetics of these metastable defects were governed, not only by their thermal annealing and photo-generation, but also by photo-induced annealing.

Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films. I.A.Kurova, N.N.Ormont, A.L.Gromadin: Semiconductors, 2003, 37[2], 131-3