It was shown that defects in the form of divacancy D clusters with a tetravacancy core adequately described observed neutron-produced effects in float-zone Si. It was predicted that the complete-depletion voltage would decrease at a dopant concentration which exceeded a critical value. This decrease was attributed to a so-called contraction of the outer region of the space charge of the cluster. The magnitude of the expected effect was governed by the factor, 1/[1–(rn/rc)3], where rn and rc were the radii of the core and cluster, respectively.

Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon. P.F.Ermolov, D.E.Karmanov, A.K.Leflat, V.M.Manankov, M.M.Merkin, E.K.Shabalina: Semiconductors, 2002, 36[10], 1114-22