A study was made of the formation of Se-related complexes in Si. On the basis of an analysis of the kinetics of donor-center formation, the composition of the simplest complexes and the main parameters of their formation were determined. The polymerization process, Se + Sen–1 ↔ Sen, was analyzed, and this made it possible to describe quantitatively the features of in-diffusion of Se atoms from the implanted region and into the bulk. The equilibrium solubility of Se in Si was regarded as being a result of the formation of monomers, having a limited concentration, during formation of the complexes.

Formation of Selenium-Containing Complexes in Silicon. A.A.Taskin, E.G.Tishkovskiĭ: Semiconductors, 2002, 36[6], 605-14