The interaction of radiation defects with P atoms, in Si crystals subjected to electron irradiation and heat treatment, was studied under conditions of various degrees of supersaturation with respect to the equilibrium concentration of impurities and point defects. It was shown that, during irradiation, the electron-dose dependence of the P concentration at lattice sites tended towards a constant value. The latter value was governed by the irradiation temperature. The stages of recovery of the P concentration at lattice sites, as a result of heat treatment, were related to the temperature intervals of dissociation of vacancy complexes. The results indicated that there were 2 processes: one process involved the interaction of dopant atoms with Si self-interstitials and the emergence of interstitial complexes. This corresponded to the radiation-stimulated decomposition of a supersaturated solution of an impurity as a result of point-defect generation and ionization. The other process consisted of the recombination of interstitial impurities with vacancies at sufficiently high temperatures or the annihilation of vacancies, released during heat treatment, with interstitial atoms incorporated into composite defect complexes with the involvement of P atoms.

Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects. V.V.Bolotov, G.N.Kamaev, L.S.Smirnov: Semiconductors, 2002, 36[4], 363-6