Available data on defect formation in hydrogenated monocrystalline Si were analyzed. It was demonstrated that the interaction of H atoms with radiation defects and impurities led to the formation of large clusters of 3 main types: vacancy, interstitial and impurity. The main condition required for the formation of these clusters was the simultaneous presence of supersaturated solutions of H, and defects in the sample. The interaction of H atoms with impurities and defects initiated the decomposition of supersaturated solid solutions of defects and impurities; with the formation of precipitates. This led to the formation of clusters which were not observed in the absence of H.

Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon. K.A.Abdulin, Y.V.Gorelkinskiĭ, B.N.Mukashev, S.Z.Tokmoldin: Semiconductors, 2002, 36[3], 239-49