A phenomenological model was developed which was able to explain quantitatively, without free parameters, the production of primary defects in Si after particle irradiation and their evolution towards equilibrium, for a wide range of generation rates of primary defects. Vacancy–interstitial annihilation, interstitial migration to sinks, divacancy and vacancy–impurity complex (VP, VO, V2O and CiOi, CiCs) formation were taken into account. The effects of various initial impurity concentrations of P, O and C, as well as of the irradiation conditions, were systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations was also investigated.

The Influence of Initial Impurities and Irradiation Conditions on Defect Production and Annealing in Silicon for Particle Detectors. I.Lazanu, S.Lazanu: Nuclear Instruments and Methods in Physics Research B, 2003, 201[3], 491-502