The diffusion of ion-beam injected self-interstitials and their interaction with impurities in crystalline material were investigated and modeled. In particular, self-interstitial substitutional-C interactions were studied by interposing a molecular-beam epitaxially grown Si1-yCy layer between the shallow self-interstitial source and a deeper B-spike (marker for self-interstitial concentration). Substitutional C atoms were shown to trap self-interstitials, to be removed from their substitutional sites, and to form stable precipitates in the C-rich region. The self-interstitial trapping mechanism was quantitatively studied by simulation. The reactions which caused trapping and

deactivation were considered. In addition, the B-marker approach was extended to 2-dimensional diffusion. High-resolution scanning capacitance microscopy was used for quantitative measurements of the 2-dimensional B transient enhanced diffusion induced in a B delta array by the self-interstitials ion-beam injected through a sub-micron oxide mask. Simulations were developed in order to describe 2-dimensional self-interstitial diffusion, and a quantitative description of 2-dimensional self-interstitial evolution was obtained. Source size effects were detected.

New Insight on the Interaction and Diffusion Properties of Ion Beam Injected Self-Interstitials in Crystalline Silicon. D.De Salvador, E.Napolitani, S.Mirabella, F.Giannazzo, V.Raineri, G.Bisognin, M.Berti, A.Carnera, A.V.Drigo, A.Terrasi, F.Priolo: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 922-6