With the aid of selective etching and transmission electron microscopy, complex studies were made of non-doped dislocation-free single crystals of float-zone Si having a diameter of 30mm. The crystals were obtained using various growth rates, and were subjected to various treatments. It was established that the process of micro-defect formation proceeded simultaneously via 2 independent mechanisms: vacancy and interstitial. A physical model was proposed for the formation of micro-defects in dislocation-free monocrystals of float-zone Si.

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon. V.I.Talanin, I.E.Talanin, D.I.Levinson: Crystal Research and Technology, 2002, 37[9], 983-1010