The effect of heat treatment conditions and point defects upon O precipitation was investigated by using various grown-in defect region wafers. The behavior of O precipitation depended upon the nucleation temperature and the type and concentration of point defects. The peak temperature of nucleation for O precipitation ranged from 687 to 734C in vacancy-rich, oxidation-induced stacking fault ring, interstitial Si-rich and interstitial poor regions. In vacancy-poor regions, the peak temperature of nucleation was about 870C. The vacancy played an important role in increasing the peak nucleation temperature for O precipitation.

The Influence of Point Defects on the Behavior of Oxygen Precipitation in CZ-Si Wafers. D.H.Hwang, S.M.Hur, K.H.Lee: Journal of Crystal Growth, 2003, 249[1-2], 37-43