An analytical calculation of the behavior of point-defects in growing crystals was performed for various types of temperature field; the isotherms of which were inclined, spherical or toroidal. It was concluded that the saturation of point defects was affected not only by the temperature gradient, its derivative and the pulling rate but also by the inclination and the curvature of the isotherms.

Effects of Isotherm Shapes on the Point-Defect Behavior in Growing Silicon Crystals. T.Ebe: Journal of Crystal Growth, 2002, 244[2], 142-56