The theoretical background of the Schottky barrier capacitance of disordered semiconductors was recalled and the temperature, frequency, and bias dependence of the capacitance was illustrated in hydrogenated amorphous Si (a-Si:H), hydrogenated polymorphous Si (pm-Si:H) and hydrogenated microcrystalline Si (μc-Si:H). Both a-Si:H and pm-Si:H followed the same trends, with a lower defect density in pm-Si:H. Quite different features were observed in μc-Si:H, and were related to different defect levels and to the two-phase constitution of the material. Finally, the capacitance analysis was reviewed within the framework of the amphoteric dangling bond states, where the influence of both defect transitions was emphasized.

Capacitance Techniques for the Evaluation of Electronic Properties and Defects in Disordered Thin Film Semiconductors. J.P.Kleider: Thin Solid Films, 2003, 427[1-2], 127-32