The local density functional theory was used to study the electrical levels and thermal stabilities of complexes of interstitial B with O and C and a B dimer with H. The energy levels of these defects were compared with those found from deep-level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at Ec–0.23, Ev + 0.29 and Ev + 0.51eV were attributed to BiOi, BiCs, and BiBsHi, respectively. Here, BiCs was passivated by one H atom. Evidence for the existence of BiCs had implications for the mechanisms involved in the suppression by C of transient-enhanced diffusion of B in ion-implanted Si.

Formation of BiOi, BiCs, and BiBsHi Defects in e-Irradiated or Ion-Implanted Silicon Containing Boron. J.Adey, R.Jones, P.R.Briddon: Applied Physics Letters, 2003, 83[4], 665-7