Self-interstitials in Si aggregated to form rod-like defects aligned along [110] directions and were found on {111} or {113} crystallographic planes. These systems were known to be electrically and optically active. The results of first-principles calculations of the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes were compared with experiment.

Planar Interstitial Aggregates in Si. J.P.Goss, T.A.G.Eberlein, R.Jones, N.Pinho, A.T.Blumenau, T.Frauenheim, P.R.Briddon, S.Öberg: Journal of Physics - Condensed Matter, 2002, 14[48], 12843-53