By combining data from temperature- and injection-dependent lifetime spectroscopy measured by means of the microwave-detected photoconductance decay technique and the quasi-steady state photoconductance technique, respectively, the exact electronic structure of the metastable defect in standard B-doped Czochralski (Cz) Si was determined. A detailed Shockley–Read–Hall analysis of the entire temperature-dependent lifetime spectroscopy curve reveals that the Cz-specific defect acted as an attractive Coulomb center [σn(T) = σn0T–2] which was localized in the upper band-gap half at EC–Et = 0.41eV and has an electron/hole capture cross section ratio k = σn/σp = 9.3. The accuracy of this determination manifests itself by the fact that the corresponding injection-dependent lifetime spectroscopy curve could be simulated with the same parameter set.

Electronic Properties of the Metastable Defect in Boron-Doped Czochralski Silicon - Unambiguous Determination by Advanced Lifetime Spectroscopy. S.Rein, S.W.Glunz: Applied Physics Letters, 2003, 82[7], 1054-6