Temperature- and injection-dependent lifetime spectroscopy, a highly sensitive contactless defect characterization technique, was described. In this method, the injection-level-dependent carrier lifetime curves of a semiconductor were measured at various temperatures by means of an inductively coupled resonant circuit. In order to illustrate certain features of temperature- and injection-dependent lifetime spectroscopy, the lifetime-limiting defect center in Al-doped Czochralski Si was analyzed. It was shown that, compared to previous lifetime spectroscopy techniques, temperature- and injection-dependent lifetime spectroscopy not only determined the defect energy level with improved accuracy, but was also capable of determining the temperature dependence of the electron and hole capture cross-sections. The method also permitted the separation of shallow and deep-level centers.

Temperature- and Injection-Dependent Lifetime Spectroscopy for the Characterization of Defect Centers in Semiconductors. J.Schmidt: Applied Physics Letters, 2003, 82[13], 2178-80